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51.
康茂 《中国照明电器》2020,(2):27-30,34
在COB(Chip On Board)LED光组件制造领域,点胶、测试和补粉关键工艺基本以手工或半自动为主。为了保证COB LED产品质量一致性、提高生产效率,研制了一种COB自动在线点胶测试及补粉一体机,实现点胶、测试、补粉生产工序的自动化生产。阐述了其工艺流程及设计总体方案,提出了荧光粉量修补方法,修正初次点胶量,实现动态调节,减少人工干预。经实验验证,该一体机可以提高点胶工艺的自动化程度,具有运行速度快、可靠性好、性能稳定等特点。  相似文献   
52.
为有效提高热塑性淀粉塑料(TPS)的力学和耐水性能,本文提出用不同波长的紫外光照的方法来实现TPS表面的光交联改性。将光引发剂2,4,6?三甲基苯甲酰基二苯基氧化膦(TPO)的乙醇溶液涂覆于TPS表面后进行紫外光照射,研究了不同紫外光波长(254、308、365 nm)对TPS交联度、力学性能、动态力学性能、耐水性和吸湿性的影响。结果表明,与254 nm和365 nm紫外光照后的样品相比,308 nm光照后TPS样品的拉伸、弯曲和冲击强度最大,分别为4.1 MPa,2.7 MPa和96.8 kJ/m2;TPS中淀粉富集区的玻璃化转变温度(Tα)、甘油富集区的玻璃化转变温度(Tβ)分别达最高为-37.48 ℃和50.32 ℃,表面接触角最大为75 °,吸水性能也得到显著改善,交联度结果证实此时形成了最佳的交联结构。  相似文献   
53.
AlN ceramics were successfully fabricated through a joint process of digital light processing (DLP) 3D printing technology and heat treatment at 1780 °C∼1845 °C. DLP is an addictive manufacturing process, enabling the near net shape fabrication. The AlN grains in this work developed well and there were small amounts of grain-boundary phases at the three-grain junctions. The particle size of AlN became larger and the densification increased with increasing sintering temperature. The pores of AlN ceramics also decreased, which led to the increase of thermal conductivity and flexural strength. The optimal thermal conductivity and flexural strength of AlN ceramic reached 155 W/(m·K) and 265 ± 20 MPa when sintered at 1845 °C.  相似文献   
54.
The knowledge of turbo code's minimum Hamming distance (dmin) and its corresponding codeword multiplicity (Amin) is of a great importance because the error correction capability of a code is strongly tied to the values of dmin and Amin. Unfortunately, the computational complexity associated with the search for dmin and Amin can be very high, especially for a turbo code that has high dmin value. This paper introduces some useful properties of turbo codes that use structured interleavers together with circular encoding. These properties allow for a significant reduction of search space and thus reduce significantly the computational complexity associated with the determination of dmin and Amin values. © 2014 The Authors. International Journal of Communication Systems published by John Wiley & Sons, Ltd.  相似文献   
55.
Aiming to environment protection, green solvents are crucial for commercialization of solution-processed optoelectronic devices. In this work, d-limonene, a natural product, was introduced as the non-aromatic and non-chlorinated solvent for processing of polymer light-emitting diodes (PLEDs) and organic field effect transistors (OFETs). It was found that d-limonene could be a good solvent for a blue-emitting polyfluorene-based random copolymer for PLEDs and an alternating copolymer FBT-Th4(1,4) with high hole mobility (μh) for OFETs. In comparisons to routine solvent-casted films of the two conjugated polymers, the resulting d-limonene-deposited films could show comparable film qualities, based on UV–vis absorption spectra and observations by atomic force microscopy (AFM). With d-limonene as the processing solvent, efficient blue PLEDs with CIE coordinates of (0.16, 0.16), maximum external quantum efficiency of 3.57%, and luminous efficiency of 3.66 cd/A, and OFETs with outstanding μh of 1.06 cm2 (V s)−1 were demonstrated. Our results suggest that d-limonene would be a promising non-aromatic and non-chlorinated solvent for solution processing of conjugated polymers and molecules for optoelectronic device applications.  相似文献   
56.
The concept of using an ambipolar bilayer semiconducting heterostructure in organic light-emitting transistors (OLETs) is introduced to provide a new approach to achieve surface emission. The properties of top-gate-type bilayer OLETs with ambipolar materials based on two types of fluorene-type polymers used as an emissive layer and an electron blocking layer are investigated. Line-shaped yellow–green emission occurs near a hole-injection electrode. When hole transport is dominant in the upper layer which acts as an electron blocking layer, and electrons are injected into the lower layer, an in-plane light-emitting pattern is observed. The measured in-plane emission zone confirms that both hole and electron transport are determined to occur mainly along the different organic layers between the source and drain electrodes, and an in-plane recombination zone of electrons and holes exists near the bilayer organic interface. This work is anticipated to be useful for the development of in-plane light-emitting transistors.  相似文献   
57.
An increasing amount of commercial measurement instruments implementing a wide range of measurement technologies is rapidly becoming available for dimensional and geometric verification. Multiple solutions are often acquired within the shop-floor with the aim of providing alternatives to cover a wider array of measurement needs, thus overcoming the limitations of individual instruments and technologies.In such scenarios, multisensor data fusion aims at going one step further by seeking original and different ways to analyze and combine multiple measurement datasets taken from the same measurand, in order to produce synergistic effects and ultimately obtain overall better measurement results.In this work an original approach to multisensor data fusion is presented, based on the development of Gaussian process models (the technique also known as kriging), starting from point sets acquired from multiple instruments. The approach is illustrated and validated through the application to a simulated test case and two real-life industrial metrology scenarios involving structured light scanners and coordinate measurement machines.The results show that not only the proposed approach allows for obtaining final measurement results whose metrological quality transcends that of the original single-sensor datasets, but also it allows to better characterize metrological performance and potential sources of measurement error originated from within each individual sensor.  相似文献   
58.
Silver nanowire (AgNW) based transparent electrodes are inherently coarse and therefore typically are only ever weakly bonded to a substrate. A remarkable improvement in the characteristics of a AgNW network film has, however, been achieved through a simple and short process of irradiating it with intense pulsed light (IPL). This not only avoids any severe deterioration in the optical characteristics of the AgNW film, but also significantly improves its electrical conductivity, adhesion to a polymeric substrate, and ability to endure bending stress. Most important of all, however, is the finding that the surface roughness of AgNW networks can also be improved by radiation. In a series of measurements made of organic light emitting diodes fabricated using these treated electrodes, it was revealed that the leakage current can be notably reduced by IPL treatment.  相似文献   
59.
New chiral compounds of the steroid type, namely, 3-alkanoyl- and 3-alkyl derivatives of 16-arylidene estrone, were synthesized and exhibited high helical twisting power (HTP) in nematic liquid crystals E63 and LC-1289. The peculiarities of the molecular structure of chiral compounds (CCs) and their high degree of chirality were discussed. Quite small concentrations of chiral compounds in both nematic solvents were needed to obtain a short-pitch cholesteric helical macrostructure with the selective light reflection in the visible range of the spectrum. The insignificant temperature dependence of the maximum wavelength of the selective light reflection obtained on the whole cholesteric range for all studied liquid crystalline (LC) systems could be related to relatively rigid molecular structure of the chiral compounds. The cholesteric LC mixtures comprising 3-alkanoyl- and 3-alkyl derivatives of 16-arylidene estrone were characterized by the phase stability and the stability of reflective characteristics in time that makes it possible to consider this series of dopants as appropriate for development of bistable cholesteric reflective LC displays.  相似文献   
60.
We have investigated the semiconducting and photoelectrochemical properties of SnO films grown potentiostatically on tin substrate. The oxide is characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The anodic process corresponds to the formation of SnO·nH2O pre-passive layer that is removed upon increasing potential due to surface etching at the metal/oxide interface. SnO films deposited for long durations (>50 mn) are uniform and well adhered; they thicken up to ~50 nm by diffusion-controlled process and the growth follows a direct logarithmic law. The thickness is determined by coulometry and the X-ray diffraction indicates the tetragonal SnO phase (SG: P4/mmm) with a crystallite size of 32 nm. The Mott–Schottky plot is characteristic of n type conductivity with an electrons density of 5.72×1018 cm−3, a flat band potential of −0.09 VSCE and a depletion width of ~10 nm. The valence band, located at 5.91 eV below, vacuum is made up of hybridized O2−:2p Sn2+:5s while the conduction band (4.45 eV) derives from Sn2+:5p orbital. The electrochemical impedance spectroscopy (EIS) measured in the range (10−2–105 Hz) shows the contribution of the bulk and grain boundaries. The energy band diagram predicts the photodegradation of methylene blue on SnO films. 67% of the initial concentration (10 mg L−1) disappears after 3 h of exposure to visible light (9 mW cm−2) with a quantum yield of 0.072.  相似文献   
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